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. Construction .The present invention relates to a nonvolatile semiconductor memory device and, more particularly, to a circuit for reading out stored information from memory cells of a nonvolatile memory.
Nonvolatile semiconductor memory devices are being developed to have higher densities and higher storage capacities. An example of such a memory device is disclosed in U.S. Pat. No. 5,953,611 issued to Lee on Sep. 17, 1999. In such a memory device, information stored in memory cells is read out by accessing transistors formed in the memory cells, where each transistor has its drain and source connected together in common. The charge stored in a floating gate of the transistor is discharged and transferred to a common line for reading out the stored information. The reading operation is performed by reading out the charge stored in the floating gate with respect to a power supply voltage applied to the transistor for selecting the memory cell.
When a fast memory operation, such as an access to the memory, is required, the power supply voltage applied to the memory cell transistor is changed. An ordinary power supply voltage for normal operation is not suited for fast operation of the memory device. Accordingly, there is a need for a circuit to supply a power supply voltage suitable for fast operation of the memory device.
To avoid an increase of the chip area due to forming access transistors in memory cells, the access transistors may be formed by means of a bulk transistor device, which is formed in the same process steps as the other memory transistors. There is also a need to use such a bulk transistor device as a reference for reading the information stored in the memory cells. However, the bulk transistor is generally formed by diffusing impurities, and therefore, the source and the drain of the bulk transistor cannot be interconnected. Accordingly, the bulk transistor may not be used as a reference for reading out the information stored in the memory cells.
It is therefore an object of the present invention to provide a nonvolatile semiconductor memory device in which the power supply voltage applied to a memory cell can be applied at a low impedance, thereby maintaining a fast memory operation.
To achieve the foregoing and other objects and in accordance with the purpose of the present invention, as embodied and broadly described herein, the invention provides a nonvolatile semiconductor memory device. The nonvolatile semiconductor memory device includes a substrate having a memory cell region and an access transistor region. A memory cell transistor and an access transistor are formed in the memory cell
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